IRF7484PbF
100
Duty Cycle = Single Pulse
10
1
0.1
0.01
0.01
0.05
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ? Tj = 25°C due to
avalanche losses
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
tav (sec)
Fig 19. Typical Avalanche Current Vs.Pulsewidth
250
225
200
175
150
125
100
75
50
TOP Single Pulse
BOTTOM 10% Duty Cycle
ID = 14A
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax . This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT jmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. P D (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I av = Allowable avalanche current.
25
0
25
50 75 100 125
Starting T J , Junction Temperature (°C)
150
7. ? T = Allowable rise in junction temperature, not to exceed
T jmax (assumed as 25°C in Figure 15, 16).
t av = Average time in avalanche.
D = Duty cycle in avalanche = t av ·f
Z thJC (D, t av ) = Transient thermal resistance, see figure 11)
8
Fig 20. Maximum Avalanche Energy
Vs. Temperature
P D (ave) = 1/2 ( 1.3·BV·I av ) = D T/ Z thJC
I av = 2 D T/ [1.3·BV·Z th ]
E AS (AR) = P D (ave) ·t av
www.irf.com
相关PDF资料
IRF7521D1TRPBF MOSFET N-CH 20V 2.4A MICRO8
IRF7521D1TR MOSFET N-CH 20V 2.4A MICRO8
IRF7523D1TRPBF MOSFET N-CH 30V 2.7A MICRO8
IRF7523D1TR MOSFET N-CH 30V 2.7A MICRO8
IRF7524D1TR MOSFET P-CH 20V 1.7A MICRO8
IRF7526D1PBF MOSFET P-CH 30V 2A MICRO8
IRF7526D1TR MOSFET P-CH 30V 2A MICRO8
IRF7601TR MOSFET N-CH 20V 5.7A MICRO8
相关代理商/技术参数
IRF7488 制造商:International Rectifier 功能描述:MOSFET N SO-8
IRF7488HR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 80V 6.3A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 80V 6.3A 8SOIC - Rail/Tube
IRF7488PBF 制造商:International Rectifier 功能描述:MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 24 Milliohms;ID 6.3A;SO-8;PD 2.5W;VGS +/-20V 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 80V 6.3A 8PIN SO - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N SO-8 制造商:International Rectifier 功能描述:MOSFET, N, SO-8 制造商:International Rectifier 功能描述:MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.3A; Drain Source Voltage Vds:80V; On Resistance Rds(on):29mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; ;RoHS Compliant: Yes
IRF7488TRHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 80V 6.3A 8-Pin SOIC T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 80V 6.3A 8SOIC - Tape and Reel
IRF7488TRPBF 功能描述:MOSFET MOSFT 80V 6.3A 29mOhm 38nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF7490 制造商:International Rectifier 功能描述:MOSFET N SO-8
IRF7490HR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 5.4A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 5.4A 8SOIC - Rail/Tube
IRF7490PBF 功能描述:MOSFET 100V 1 N-CH HEXFET 39mOhms 37nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube